SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF7G24LS-100,118 is a 100 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features excellent ruggedness and high efficiency with low thermal resistance (Rth(j-c) typ 0.3 K/W). The device supports single carrier IS-95 and 3GPP W-CDMA modes. Key electrical parameters include a drain-source breakdown voltage of 65 V, gate-source threshold voltage of 1.5 V to 2.3 V, forward transconductance of 10.5 S typical, and drain cut-off current of 25.1 A to 29 A typical. It utilizes an earless flanged ceramic package (SOT502B) with two leads.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package variant selection. Confirm RoHS compliance status as per the latest datasheet revision. Ensure sourcing channels provide valid traceability for this RF power component.
Select based on required output power and frequency band coverage between 2300 MHz and 2400 MHz. Consider the earless flanged SOT502B package for mounting constraints. Evaluate thermal management requirements given the 0.3 K/W junction-to-case thermal resistance specification.
This component belongs to the BLF7G24L-100 family from Ampleon. The LS-100 variant specifically denotes the earless flanged ceramic package version (SOT502B), distinct from the standard flanged version with mounting holes.
Consult official Ampleon documentation for confirmed substitute part numbers. Verify pinout compatibility and thermal characteristics when considering alternative devices.