SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF7G24LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and features a typical drain efficiency of 33% under single carrier W-CDMA conditions. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 1.87 S. It utilizes an earless flanged ceramic package (SOT502B) with two leads.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as per the latest product data sheet revision. Ensure that the procurement channel provides authentic components directly traceable to Ampleon or authorized distributors to prevent counterfeit risks.
Select this component for high-efficiency RF power amplification in cellular infrastructure operating within the specified UMTS band. Evaluate the thermal management requirements based on the junction-to-case thermal resistance. Consider the internal matching network when designing the input and output impedance circuits to maximize gain and efficiency.
This part belongs to the BLF7G24L series of power LDMOS transistors manufactured by Ampleon. The 'LS' designation indicates the earless flanged ceramic package variant (SOT502B), distinct from the standard flanged version. These devices are engineered specifically for demanding wireless communication environments requiring robust performance and linearity.
Consult official substitution lists for verified alternatives. Cross-compatibility depends on exact pinout, package dimensions, and electrical specifications. Verify that any substitute maintains the required ruggedness and thermal characteristics for the intended application.