BLF7G24LS-140

BLF7G24LS-140

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:91dcb3c914ed Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):5µA
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:140W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF7G24LS-140

Overview

The BLF7G24LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and features a typical drain efficiency of 33% under single carrier W-CDMA conditions. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 1.87 S. It utilizes an earless flanged ceramic package (SOT502B) with two leads.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Low thermal resistance providing excellent thermal stability
  • Designed for low memory effects supporting digital pre-distortion

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2300 MHz to 2400 MHz range
  • Single carrier IS-95 systems
  • Single carrier W-CDMA systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as per the latest product data sheet revision. Ensure that the procurement channel provides authentic components directly traceable to Ampleon or authorized distributors to prevent counterfeit risks.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular infrastructure operating within the specified UMTS band. Evaluate the thermal management requirements based on the junction-to-case thermal resistance. Consider the internal matching network when designing the input and output impedance circuits to maximize gain and efficiency.

Part Context

This part belongs to the BLF7G24L series of power LDMOS transistors manufactured by Ampleon. The 'LS' designation indicates the earless flanged ceramic package variant (SOT502B), distinct from the standard flanged version. These devices are engineered specifically for demanding wireless communication environments requiring robust performance and linearity.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-compatibility depends on exact pinout, package dimensions, and electrical specifications. Verify that any substitute maintains the required ruggedness and thermal characteristics for the intended application.

BLF7G24LS-140BLF7G24LS-140

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