SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF7G24LS-140,118 is an LDMOS power transistor manufactured by Ampleon USA Inc., designed for high-efficiency RF power amplification. It operates within the 925 MHz to 960 MHz frequency range and is optimized for W-CDMA applications. The device features a drain-source breakdown voltage of 65 V and a typical output power of 24 W at 1 dB gain compression. Key electrical parameters include a forward transconductance of approximately 13 S and a low thermal resistance from junction to case of 0.8 K/W. The component is supplied in a SOT502B surface-mount package, ensuring reliable performance in base station environments.
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints, specifically the SOT502B outline. Confirm RoHS compliance status through official documentation before integration into production lines.
Select this component when designing for 900 MHz band W-CDMA systems requiring 24 W output power. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance. Compare gain and linearity metrics against system requirements to ensure adequate headroom for multi-carrier signals without excessive distortion.
This part belongs to the BLF7G series of LDMOS transistors from Ampleon, which are widely used in telecommunications infrastructure. The series is characterized by robust construction and high reliability for continuous wave and modulated signal applications in mobile network base stations.
Direct replacements should be sought within the Ampleon BLF7G family with matching power levels and frequency ranges. Verify pinout compatibility and thermal characteristics before substituting. Cross-reference with BLF7G24LS variants or similar 24W LDMOS devices from other manufacturers only after confirming all electrical and mechanical parameters align.