BLF7G24LS-160P,118

Overview

The BLF7G24LS-160P is a 160 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It supports single carrier IS-95 configurations with pilot, paging, sync, and six traffic channels (Walsh codes 8–13), achieving a peak-to-average ratio of 9.7 dB at 0.01% probability on the CCDF. The device operates with a drain-source voltage of 28 V and a quiescent current of 1200 mA. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 6.9 S. It features a thermal resistance from junction to case of 0.2 K/W.

Feature Summary

• Designed for broadband operation across the 2300 MHz to 2400 MHz spectrum
• Lower output capacitance optimized for improved performance in Doherty amplifier architectures
• Internally matched configuration to simplify circuit integration
• Integrated electrostatic discharge protection mechanisms

Applications

• RF power amplifiers for base stations operating in the 2300 MHz to 2400 MHz band
• Multi-carrier applications utilizing IS-95 signaling standards
• Broadband RF power amplifier designs requiring low memory effects

Procurement Notes

Verify the specific package variant required for the design, as the LS suffix denotes an earless flanged balanced ceramic package (SOT539B). Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature limits and load mismatch conditions. Ensure compliance with RoHS directives during procurement and assembly processes.

Selection Notes

Select this component for high-efficiency base station amplifiers operating between 2300 MHz and 2400 MHz. The internal matching network reduces external component count, while the low thermal resistance supports stable operation under high power loads. Consider the ruggedness specifications when designing for environments with potential impedance mismatches up to 10:1 VSWR.

Part Context

This part belongs to the Ampleon BLF7G series of LDMOS power transistors. The BLF7G24L-160P shares identical electrical characteristics but utilizes a flanged balanced ceramic package with mounting holes (SOT539A). Both variants are engineered for similar cellular infrastructure applications, offering high linearity and efficiency for modern wireless communication systems.

Replacement Considerations

The BLF7G24L-160P serves as a direct functional equivalent with a different mechanical footprint (SOT539A versus SOT539B). When substituting, verify that the PCB layout accommodates the presence or absence of mounting ears. Electrical performance remains consistent, but mechanical clearance and screw pitch requirements must be adjusted accordingly.