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The BLF7G27L-140 is a 140 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 65 V and features an internally matched design for ease of use. The device supports single carrier IS-95 and single carrier W-CDMA modes, delivering typical average output powers of 30 W and 50 W respectively at 28 V bias. Key electrical characteristics include a drain efficiency up to 27% and a power gain of 16.5 dB. It incorporates integrated ESD protection and exhibits excellent ruggedness against load mismatches.
Verify the specific package variant required for the design. The BLF7G27L-140 corresponds to the SOT502A flanged ceramic package with mounting holes, whereas the BLF7G27LS-140 uses the SOT502B earless flanged package. Confirm that the ordering suffix matches the intended mechanical footprint before finalizing procurement orders.
Select this component for high-efficiency RF power amplification in cellular infrastructure. Ensure the application environment accommodates the specified junction temperature limits and thermal resistance requirements. Verify that the input return loss and ACPR specifications meet the system's linearity and interference constraints for the chosen modulation scheme.
This part belongs to the BLF7G series of LDMOS power transistors manufactured by Ampleon. It is specifically engineered for wireless communication base stations operating in the S-band spectrum. The device represents a mature technology solution for multi-carrier amplification where high linearity and ruggedness are critical performance factors.
The BLF7G27LS-140 serves as a direct mechanical alternative within the same family, differing only in the SOT502B earless flanged package compared to the SOT502A package of the BLF7G27L-140. Electrical performance remains consistent between these variants. No other cross-manufacturer substitutes are officially documented.