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The BLF7G27L-150P,112 is an RF power LDMOS transistor manufactured by Ampleon USA Inc. It operates within the S-band frequency range of 2.3 GHz to 2.7 GHz. The device features a drain-source breakdown voltage (Vds) of 65 V and a typical gain of 18 dB at a test condition of 28 V and 1.3 A. It delivers an output power of 45 W. The component is housed in a CDFM6 package, also identified as SOT-1244C.
Verify the manufacturer designation as Ampleon USA Inc. or its successor entities such as NXP Semiconductors, given historical corporate transitions in the RF semiconductor sector. Confirm the specific suffix 112 corresponds to the required tape-and-reel packaging format. Ensure the part number matches the exact electrical specifications for the 65 V rating and 45 W output power before procurement.
Select this component when designing circuits requiring S-band performance with a 65 V supply rail. The CDFM6 package requires appropriate thermal management solutions due to the 45 W output power dissipation. Verify that the driving circuitry can support the 18 dB gain requirement and the 28 V operating voltage point. Consider the 2.3 GHz to 2.7 GHz bandwidth constraints for the intended application frequency.
This device belongs to the BLF7G27 series of RF power transistors. The 'L' variant typically denotes specific internal matching or structural optimizations compared to standard versions. The BLF7G27 family is widely recognized in telecommunications infrastructure for its reliability and linearity in S-band applications. The 150P designation indicates the specific power handling and pin configuration within this product line.
Direct substitutes may include other BLF7G27 variants from Ampleon or NXP, provided the package and electrical parameters align. Cross-compatibility with devices from other manufacturers requires careful verification of pinout, thermal resistance, and impedance matching networks. No official substitute list is confirmed in the available data.