BLF7G27LS-100,112

BLF7G27LS-100,112

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:817ead498df9 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):28A
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:20W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLF7G27LS-100,112

Overview

The BLF7G27LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 900 mA. The device delivers an average output power of 20 W in IS-95 mode and 25 W in single carrier W-CDMA mode, achieving typical drain efficiencies of 28% and 30%, respectively. It utilizes the SOT502B earless flanged ceramic package with two leads.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection compliant with C2A and 3A classifications
  • Low thermal resistance providing excellent thermal stability
  • Designed for low memory effects supporting pre-distortion

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz range
  • Single carrier IS-95 systems
  • Single carrier W-CDMA systems

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts prior to procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular base stations operating within the 2500 MHz to 2700 MHz band. Consider the SOT502B package constraints and mounting requirements. Evaluate thermal management solutions based on the junction-to-case thermal resistance characteristics provided in the datasheet.

Part Context

This part belongs to the BLF7G27L-100 series of power LDMOS transistors manufactured by Ampleon. The LS variant specifically denotes the SOT502B earless flanged ceramic package, distinguishing it from the standard flanged version. It is engineered for robust performance in demanding wireless infrastructure environments.

Replacement Considerations

Consult the official Ampleon datasheet for confirmed substitute part numbers. Verify pinout compatibility and thermal characteristics when considering alternatives. Ensure any replacement meets the same ruggedness and efficiency specifications required for the target application.

BLF7G27LS-100,112BLF7G27LS-100,112

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