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The BLF7G27LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 900 mA. The device delivers an average output power of 20 W in IS-95 mode and 25 W in single carrier W-CDMA mode, achieving typical drain efficiencies of 28% and 30%, respectively. It utilizes the SOT502B earless flanged ceramic package with two leads.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts prior to procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.
Select this component for high-efficiency RF power amplification in cellular base stations operating within the 2500 MHz to 2700 MHz band. Consider the SOT502B package constraints and mounting requirements. Evaluate thermal management solutions based on the junction-to-case thermal resistance characteristics provided in the datasheet.
This part belongs to the BLF7G27L-100 series of power LDMOS transistors manufactured by Ampleon. The LS variant specifically denotes the SOT502B earless flanged ceramic package, distinguishing it from the standard flanged version. It is engineered for robust performance in demanding wireless infrastructure environments.
Consult the official Ampleon datasheet for confirmed substitute part numbers. Verify pinout compatibility and thermal characteristics when considering alternatives. Ensure any replacement meets the same ruggedness and efficiency specifications required for the target application.