BLF7G27LS-140,112

Overview

The BLF7G27LS-140,112 is a single LDMOS RF power transistor designed for high-efficiency operation in the S-band. It features a robust ceramic package suitable for flange mounting and thermal management. The device is engineered to deliver substantial output power with high gain and linearity, making it suitable for demanding RF applications. Key electrical characteristics include a drain-source breakdown voltage of 65V and a maximum drain current capability optimized for pulsed and continuous wave operations within specified frequency ranges.

Feature Summary

• High power density design for compact RF modules
• Robust ceramic construction for reliable thermal dissipation
• Optimized for linear amplification with low distortion

Applications

• Base station transmitters
• Radar systems
• Industrial heating and plasma generation

Procurement Notes

Verify the specific suffix '112' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact voltage and frequency variants available from authorized Ampleon distributors to avoid functional mismatches.

Selection Notes

Select this component when high efficiency and linearity are required in S-band applications. Consider the thermal resistance of the ceramic package and ensure adequate heatsinking. Compare input/output impedance matching requirements with system design constraints before finalizing the selection.

Part Context

This part belongs to the BLF7G series of LDMOS transistors from Ampleon, known for reliability in RF power applications. The series offers various voltage and power ratings tailored for different frequency bands and amplifier topologies.

Replacement Considerations

Check for direct cross-reference models within the same BLF7G family or equivalent offerings from other manufacturers like NXP. Verify pinout compatibility and thermal interface dimensions before substituting.