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The BLF7G27LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 28 V and features an SOT502B earless flanged ceramic package. Typical performance at Tcase = 25 °C includes a power gain of 16.5 dB, a drain efficiency of 27% for single carrier W-CDMA, and an ACPR of -38 dBc at 5 MHz offset. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases under specified conditions.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status as required by local regulations. Validate that the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability.
Select this component for high-efficiency RF power amplifier designs operating between 2500 MHz and 2700 MHz. Ensure the application circuit supports Class-AB operation with appropriate biasing for the specified 28 V drain voltage. Verify thermal management capabilities to maintain junction temperature within the 200 °C limit during peak load conditions.
This part belongs to the BLF7G27L series of power LDMOS transistors manufactured by Ampleon. It shares core electrical characteristics with the BLF7G27L-140 but utilizes the SOT502B earless flanged package instead of the standard flanged version. This series targets cellular infrastructure requiring robust performance in multi-carrier environments.
The BLF7G27L-140 serves as a direct functional substitute, differing only in package type (SOT502A vs SOT502B). Designers must account for mechanical mounting differences when swapping between these variants.