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The BLF871,112 is a UHF power LDMOS transistor manufactured by Ampleon USA Inc. It delivers 100 W broadband output from HF to 1 GHz and is designed for broadcast transmitter and industrial applications. The device operates with a drain-source voltage of 40 V and features a maximum drain-source breakdown voltage of 89 V. At 860 MHz in a common-source test circuit, it provides a typical power gain of 21 dB and a drain efficiency of 47% under two-tone conditions. The component utilizes an SOT467C flanged ceramic package.
Verify the specific ordering suffix against the manufacturer's current product data sheet to confirm package type and compliance status. Confirm that the component meets all required environmental directives such as RoHS before finalizing procurement specifications. Ensure proper ESD handling protocols are followed during transport and assembly due to the device's sensitivity.
Select this component for designs requiring broadband RF power amplification between HF and 1 GHz. Verify that the application circuit can support the specified 40 V drain-source voltage and quiescent current requirements. Ensure thermal management solutions accommodate the junction-to-case thermal resistance characteristics provided in the datasheet for reliable operation at target power levels.
This part belongs to the BLF871 series of UHF power LDMOS transistors produced by Ampleon. The series includes variants such as the BLF871S, which differs in package configuration. These devices are engineered for robust performance in demanding RF environments, offering a balance of high power output and linearity suitable for complex modulation schemes.
Consult the official Ampleon documentation for confirmed substitute part numbers. No public substitutes are listed in the provided source material.