BLF871S,112

Overview

The BLF871S,112 is a UHF power LDMOS transistor manufactured by Ampleon USA Inc. It delivers 100 W broadband output from HF to 1 GHz and operates at a drain-source voltage of 40 V with a quiescent current of 0.5 A. The device provides a power gain of 21 dB and a drain efficiency of 47% in 2-tone operation at 860 MHz. It features integrated ESD protection and excellent ruggedness. The component is housed in an SOT467B earless ceramic package.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• High power gain and high efficiency
• Excellent ruggedness for digital transmitter applications

Applications

• Communication transmitter applications in the UHF band
• Industrial applications in the UHF band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant and compliance status. Confirm that the component meets all necessary environmental directives required for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for UHF broadcast and industrial applications requiring broadband performance up to 1 GHz. Ensure the design accommodates the 40 V drain-source voltage requirement and utilizes appropriate thermal management solutions to maintain junction temperature within specified limits during continuous operation.

Part Context

This part belongs to the BLF871 series of UHF power LDMOS transistors designed for high-efficiency broadband applications. The BLF871S variant specifically utilizes the SOT467B earless ceramic package, distinguishing it from flanged versions while maintaining identical electrical characteristics and performance metrics across the frequency range.

Replacement Considerations

BLF871