SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF878,112 is a UHF power LDMOS transistor manufactured by Ampleon USA Inc. It delivers 300 W broadband output across the 470 MHz to 860 MHz frequency range. The device operates with a drain-source voltage of 42 V and features integrated ESD protection. Key electrical parameters include a drain-source breakdown voltage of 89 V, a gate-source threshold voltage of 1.9 V typical, and a forward transconductance of 15.5 S. It utilizes an SOT979A flanged ceramic package with two mounting holes and four leads.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component matches the required SOT979A package variant. Ensure compliance with current RoHS directives as specified in the product data sheet. Validate the authenticity of the supplier through authorized distribution channels.
Select this component for UHF broadband applications requiring high power output and efficiency. Consider the thermal resistance characteristics when designing the heatsink interface. Verify impedance matching requirements for both narrowband and broadband test circuits. Evaluate the device's ruggedness capabilities regarding load mismatch conditions.
The BLF878 belongs to the UHF power LDMOS transistor family designed for broadcast and industrial use. It is characterized by its ability to maintain performance across a wide frequency spectrum. The device supports both analog and digital signal transmission modes efficiently.
Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other LDMOS families without verifying pinout and electrical specifications.