BLF882U

BLF882U

$140.28
  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-

SKU:2636bc8c992d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:705MHz
  • Gain:20.6dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:200W
  • Voltage - Rated:104 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLF882U

Overview

The BLF882U is a 200 W LDMOS RF power transistor designed for broadcast and industrial applications. It delivers rated output power in broadband operations spanning from HF to 860 MHz. The device operates with a drain-source voltage of 50 V and achieves a typical power gain of 20.6 dB at 705 MHz. Key electrical parameters include a drain-source breakdown voltage of 104 V, a gate-source threshold voltage ranging from 1.4 V to 2.4 V, and a thermal resistance from junction to case of 0.56 K/W. The transistor supports class-AB operation with high efficiency and excellent ruggedness against load mismatches.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • High power gain and high efficiency
  • Excellent ruggedness under load mismatch conditions
  • Easy power control capability

Applications

  • Transmitter applications in the HF to 860 MHz frequency range
  • Industrial applications in the HF to 860 MHz frequency range
  • Broadcast transmitters

Procurement Notes

Verify the specific package variant required for the design, as the BLF882U corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm that the ordering suffix matches the exact physical configuration needed, such as the earless SOT502B variant if applicable. Ensure compliance with RoHS directives and handle the component according to ESD precautions during assembly.

Selection Notes

Select this component for designs requiring robust performance in digital transmitter environments where high peak-to-average ratios are present. The device is suitable for both narrowband CW pulsed operations and broadband DVB-T signals. Consider the thermal management requirements given the junction-to-case thermal resistance when designing the heat sink interface for continuous or high-duty cycle operations.

Part Context

The BLF882U belongs to Ampleon's UHF power LDMOS transistor family, specifically engineered for high-power RF amplification. It shares architectural similarities with the BLF882S, differing primarily in the mechanical package configuration. This series is optimized for applications demanding high linearity and reliability in the ultra-high frequency spectrum.

Replacement Considerations

The BLF882S serves as a direct functional alternative within the same product family, offering identical electrical characteristics but utilizing an earless flanged ceramic package (SOT502B). Verify mechanical fitment and mounting hole alignment when substituting between these variants.

BLF882UBLF882U
$140.28
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