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The BLF884PS,112 is a 350 W LDMOS RF power transistor designed for broadcast and industrial applications. It operates in the UHF band from 470 MHz to 860 MHz with internal input matching. The device features an earless flanged ceramic package (SOT1121B) with four leads and a drain connected to the flange. Key electrical parameters include a drain-source voltage of 104 V, a typical power gain of 21 dB at 860 MHz, and a thermal resistance from junction to case of 0.22 K/W. It supports class-AB operation with high efficiency and ruggedness.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as per the latest product data sheet revision. Check for any export control classifications or licensing requirements related to DVB-T functionality before procurement.
Select this component for UHF broadband amplifier designs requiring high power output and ruggedness. Ensure the application circuit can handle the specified drain-source voltage and thermal management requirements. Verify impedance matching networks align with the provided push-pull impedance data for optimal performance.
The BLF884PS,112 belongs to the BLF884P series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. It shares core electrical characteristics with the BLF884P but utilizes the SOT1121B earless flanged ceramic package instead of the SOT1121A version with mounting holes.
BLF884P serves as a direct functional replacement if the mounting hole configuration of the SOT1121A package is acceptable.