BLF888EU

Overview

The BLF888EU is a 750 W LDMOS RF power transistor designed for asymmetrical broadcast Doherty transmitter applications. It operates at 150 W DVB-T average power with excellent ruggedness suitable for digital and analog transmitters. Key electrical parameters include a main amplifier drain-source voltage of 104 V and a peak amplifier rating of 120 V. At 50 V and 600 mA quiescent current, it delivers 150 W average output power with 17 dB gain and 52% drain efficiency at 550 MHz. The device features integrated ESD protection and RoHS compliance.

Feature Summary

• Designed specifically for asymmetric Doherty operation to enable high-efficiency air-cooled transmitters
• Features integrated ESD protection and advanced flange material for optimal thermal behavior
• Provides excellent ruggedness capable of withstanding severe load mismatches in Doherty configurations
• Includes internal input matching for high gain and optimum broadband operation

Applications

• Broadcast transmitter applications in the UHF band
• Digital broadcasting systems utilizing DVB-T standards
• Asymmetrical Doherty power amplifier architectures

Procurement Notes

Verify the specific package variant required for the design, as the BLF888E corresponds to the SOT539A flanged balanced ceramic package with mounting holes, while the BLF888ES uses the SOT539B earless version. Confirm that the application environment supports the specified junction temperature limits and thermal resistance requirements to ensure long-term reliability under continuous operation.

Selection Notes

Select this component when designing UHF band transmitters requiring high power handling and ruggedness in Doherty topologies. Ensure the cooling system can maintain the case temperature within specifications given the thermal resistance values. Verify that the gate drive circuitry aligns with the threshold voltage ranges and leakage current characteristics defined in the DC specifications table.

Part Context

The BLF888EU belongs to the BLF888 series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. This family includes variants such as the BLF888BS and BLF888B, which share similar core technologies but may differ in packaging or specific performance optimizations. The EU designation typically refers to the standard flanged ceramic package configuration used in industrial and broadcast hardware.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.