BLF8G10LS-160,112

BLF8G10LS-160,112

  • Description:RF MOSFET LDMOS 30V SOT502B
  • Series:-

SKU:136f9f954b74 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:920MHz ~ 960MHz
  • Gain:19.7dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.1 A
  • Power - Output:35W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF8G10LS-160,112

Overview

The BLF8G10LS-160 is a 160 W LDMOS power transistor designed for base station applications in the 920 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and a quiescent current of 1100 mA, delivering an average output power of 35 W. The device provides a typical power gain of 19.7 dB and a drain efficiency of 29% under two-carrier W-CDMA test conditions. It features a thermal resistance from junction to case of 0.50 K/W at Tcase = 80 °C. The component utilizes an earless flanged ceramic package (SOT502B) with two leads.

Feature Summary

  • Excellent ruggedness capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 920 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant. The datasheet lists the BLF8G10L-160 and BLF8G10LS-160 as distinct part numbers corresponding to different package outlines. Ensure the requested model matches the required physical mounting configuration before finalizing procurement.

Selection Notes

Select this component for broadband operations between 920 MHz and 960 MHz where high efficiency and low memory effects are required. The integrated ESD protection and internal matching simplify circuit design. Verify that the application environment supports the specified junction temperature limits and thermal management requirements for optimal performance.

Part Context

This device belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. The series targets RF power amplifier designs for telecommunications infrastructure. The BLF8G10LS-160 specifically denotes the earless flanged ceramic package version, distinguishing it from the standard flanged variant.

Replacement Considerations

Consult the official Ampleon documentation for confirmed substitute part numbers. Cross-referencing requires verifying identical electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.

BLF8G10LS-160,112BLF8G10LS-160,112

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