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The BLF8G10LS-160 is a 160 W LDMOS power transistor designed for base station applications in the 920 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and a quiescent current of 1100 mA, delivering an average output power of 35 W. The device provides a typical power gain of 19.7 dB and a drain efficiency of 29% under two-carrier W-CDMA test conditions. It features a thermal resistance from junction to case of 0.50 K/W at Tcase = 80 °C. The component utilizes an earless flanged ceramic package (SOT502B) with two leads.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant. The datasheet lists the BLF8G10L-160 and BLF8G10LS-160 as distinct part numbers corresponding to different package outlines. Ensure the requested model matches the required physical mounting configuration before finalizing procurement.
Select this component for broadband operations between 920 MHz and 960 MHz where high efficiency and low memory effects are required. The integrated ESD protection and internal matching simplify circuit design. Verify that the application environment supports the specified junction temperature limits and thermal management requirements for optimal performance.
This device belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. The series targets RF power amplifier designs for telecommunications infrastructure. The BLF8G10LS-160 specifically denotes the earless flanged ceramic package version, distinguishing it from the standard flanged variant.
Consult the official Ampleon documentation for confirmed substitute part numbers. Cross-referencing requires verifying identical electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.