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The BLF8G10LS-270,112 is an N-channel LDMOS RF power transistor manufactured by Ampleon USA Inc. Designed for broadband applications, it operates within the 902 MHz to 960 MHz frequency range. The device features a drain-source breakdown voltage of 65 V and a typical on-resistance of 185 mOhms. It delivers an output power of 25 W with a gain of 19.7 dB at a test voltage of 28 V. Packaged in a SOT-502B surface-mount format, it supports a maximum operating temperature of +225°C and includes gate-source voltage limits of -6 V to +13 V.
Verify the specific suffix '112' against the manufacturer's current datasheet to confirm package type and reel specifications. Ensure compatibility with existing PCB footprints for the SOT-502B housing. Confirm RoHS compliance status through official documentation prior to integration into regulated supply chains.
Select this component for designs requiring stable performance in the 900 MHz band with moderate power output. Compare the 25 W output capability against system requirements to ensure adequate headroom. Evaluate the 19.7 dB gain figure for amplifier stage efficiency. Consider the 65 V breakdown voltage when designing biasing networks and protection circuits.
This part belongs to the BLF8G series of LDMOS transistors from Ampleon, optimized for cellular infrastructure and broadband radio applications. The series utilizes advanced silicon LDMOS technology to provide high linearity and efficiency. This specific model targets the 900 MHz ISM and mobile communication bands.
Consult Ampleon documentation for direct cross-references. Verify pinout compatibility if substituting with other SOT-502B devices. Check thermal resistance parameters to ensure equivalent heat dissipation capabilities.