BLF8G19LS-170BV,11

Overview

The BLF8G19LS-170BV is a 170 W LDMOS power transistor designed for base station applications in the 1800 MHz to 1990 MHz frequency range. It features improved video bandwidth and low memory effects. Typical performance at Tcase = 25 °C includes: 60 W average output power with 18.0 dB gain, 32% drain efficiency, and -31 dBc ACPR (2-carrier W-CDMA); 33 W average output power with 19.8 dB gain, 29% drain efficiency, and -40 dBc ACPR (1-carrier W-CDMA). Limiting values specify a maximum drain-source voltage of 65 V, gate-source voltage of +13 V, and junction temperature of 225 °C.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch conditions
• Decoupling leads enable improved video bandwidth for enhanced signal fidelity
• Lower output capacitance improves performance in Doherty amplifier configurations
• Designed for low memory effects to facilitate effective digital pre-distortion

Applications

• RF power amplifier for W-CDMA base stations
• Multi-carrier applications in the 1800 MHz to 1990 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package version and compliance status. Confirm current product availability as specifications may change. Ensure design compatibility with the SOT1120B earless flanged ceramic package dimensions and thermal requirements before procurement.

Selection Notes

Select this component for wideband RF power amplification requiring high linearity and ruggedness. The device is optimized for class-AB operation with integrated ESD protection and current sense capabilities. Verify that the application circuit supports the required quiescent current and thermal management for the specified junction temperature limits.

Part Context

This part belongs to the BLF8G series of LDMOS power transistors manufactured by Ampleon USA Inc. The BLF8G19LS-170BV specifically targets cellular infrastructure markets, offering a balance of high power density and efficiency for modern multi-standard base station architectures.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinouts, thermal resistance, and electrical characteristics when evaluating alternative components.