BLF8G20LS-200V

Overview

The BLF8G20LS-200V is an LDMOS RF power transistor manufactured by Ampleon USA Inc. It operates within the frequency range of 1.81 GHz to 1.88 GHz with a gain of 17.5 dB. The device delivers an output power of 55 W at a test voltage of 28 V and a drain current of 1.6 A. It features a rated voltage of 65 V and utilizes an SOT-1120B (LDMOST) package designed for base mounting.

Feature Summary

• Utilizes LDMOS technology for high performance in RF power applications
• Designed for robust operation in mobile broadband infrastructure
• Engineered for excellent thermal stability and ruggedness

Applications

• Mobile broadband base stations
• Cellular infrastructure amplifiers
• Broadband RF power amplification

Procurement Notes

This component has reached End-of-Life status, with official discontinuation notices recorded in September 2021. Verification of availability should focus on legacy stock or authorized distributors holding remaining inventory. Designers must confirm the specific revision level against original datasheets due to potential manufacturing transfers documented in Product Change Notices.

Selection Notes

Select this part for applications requiring 55 W output power in the 1.8 GHz band. Ensure the design accommodates the SOT-1120B base-mount package requirements. Verify that the system can support the specified 28 V operating voltage and manage the thermal load associated with LDMOS devices in continuous wave operations.

Part Context

The BLF8G20LS-200V belongs to the BLF8G series of LDMOS transistors from Ampleon. This family targets high-efficiency RF power amplification for cellular base stations. The '200' designation indicates its approximate power class relative to other variants in the lineup, serving as a discrete solution for macrocell and microcell deployments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.