SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF8G20LS-220 is a 220 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 65 V and features an internally matched design for ease of use. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases at 200 W CW output. Key electrical parameters include a typical power gain of 18.9 dB, a drain efficiency of 34%, and a thermal resistance from junction to case of 0.27 K/W.
Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the component matches the SOT502B earless flanged ceramic package variant required for your application. Ensure compliance with RoHS directives as specified in the product data sheet.
Select this component for high-power RF applications requiring broadband operation within the 1800 MHz to 2000 MHz band. Consider its internal matching capabilities to reduce external component count. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance for optimal performance.
This part belongs to the BLF8G20 series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for wireless communication infrastructure, providing high linearity and efficiency for modern cellular network deployments.
Consult official Ampleon substitution guides for verified alternatives. Do not assume compatibility with other packages or pinouts without verifying datasheet specifications.