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The BLF8G20LS-230V is a 230 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. The device operates at a drain-source voltage of 65 V maximum, with typical performance measured at 28 V. In a common source class-AB test circuit at Tcase = 25 °C, it delivers an average output power of 55 W with a power gain of 18 dB and a drain efficiency of 31.7% under 2-carrier W-CDMA conditions. The thermal resistance from junction to case is typically 0.27 K/W.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package version and compliance status. Confirm RoHS directive compliance requirements prior to procurement. Check product status updates on official channels as availability may change.
Select this component for base station designs requiring high power output in the 1800 MHz to 2000 MHz band. Ensure the application supports the required 28 V drain supply and adequate heat sinking for the specified thermal resistance. Verify that the design accommodates the internal matching network characteristics.
This part belongs to the BLF8G20 series of LDMOS power transistors manufactured by Ampleon USA Inc. It utilizes an earless flanged ceramic package (SOT1239B) suitable for high-power RF applications. The device is optimized for modern cellular base station architectures requiring high linearity and efficiency.
Consult the official Ampleon replacement guide for verified substitutes. Cross-reference pinouts and thermal characteristics when considering alternative models within the same family or from other manufacturers.