BLF8G20LS-260A,112

Overview

The BLF8G20LS-260A is a 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. It operates at VDS = 28 V with IDq = 750 mA (main) and VGS(amp)peak = 0.80 V. Typical performance at Tcase = 25 °C in an asymmetrical Doherty production test circuit includes: Power Gain (Gp) of 15.9 dB, Drain Efficiency (ηD) of 45.5%, and Adjacent Channel Power Ratio (ACPR) of -29 dBc at PL(AV) = 50 W. Peak output power reaches 300 W with a peak-to-average ratio of 7.0 dB at PL(AV) = 60 W. The device uses an earless flanged balanced ceramic package SOT539B.

Feature Summary

• Asymmetric design optimized for broadband operation across the 1805 MHz to 1880 MHz frequency range
• Lower output capacitance specifically engineered to improve performance in Doherty amplifier configurations
• Internally matched structure integrated with ESD protection for simplified circuit implementation
• Low thermal resistance providing excellent thermal stability and ruggedness under high load mismatch conditions

Applications

• RF power amplifiers for W-CDMA base stations
• GSM multi-carrier applications in the 1805 MHz to 1880 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct packaging and revision status. Confirm RoHS compliance requirements match Directive 2002/95/EC standards. Validate that the supplier provides original manufacturer data sheets. Ensure handling procedures adhere to ESD sensitivity precautions as specified in ANSI/ESD S20.20 or equivalent standards during installation.

Selection Notes

Select this component for asymmetric Doherty architectures requiring high efficiency and low memory effects. Verify impedance matching networks align with the provided load-pull data tables for both main and peak devices. Ensure the operating junction temperature remains within the specified limits to maintain reliability. Consider the internal matching capabilities when designing input and output circuits for the target frequency band.

Part Context

This part belongs to the BLF8G20 series of power LDMOS transistors designed by Ampleon USA Inc. It is specifically tailored for cellular infrastructure applications operating in the 1800 MHz band. The device utilizes silicon technology housed in a robust ceramic package suitable for high-power RF environments.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other series without verifying electrical parameters and pin configurations.