BLF8G22LS-140J

Overview

The BLF8G22LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 900 mA, delivering an average output power of 33 W at 2-carrier W-CDMA conditions. The device provides a typical power gain of 18.5 dB and a drain efficiency of 32.5%. It features a junction-to-case thermal resistance of 0.265 K/W and is housed in an earless flanged ceramic SOT502B package.

Feature Summary

• Designed for broadband operation across the 2000 MHz to 2200 MHz spectrum
• Low memory effects providing excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use

Applications

• RF power amplifiers for W-CDMA base stations
• Multi carrier applications in the 2000 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm that the component meets all required environmental directives before integration into final designs.

Selection Notes

Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness and low thermal resistance. Ensure the application circuit supports the specified 28 V drain voltage and 900 mA quiescent current requirements for optimal Class-AB performance.

Part Context

This part belongs to the Ampleon BLF8G22LS series of power LDMOS transistors. It is specifically engineered for wireless communication infrastructure, offering a balance of high output power and linearity suitable for modern cellular network deployments.

Replacement Considerations

Consult the official Ampleon datasheet for confirmed substitute part numbers. Verify pinout compatibility and electrical specifications before considering any alternative components.