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The BLF8G22LS-270 is a 270 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It supports 3GPP test model 1 with 64 DPCH and an 8.4 dB PAR at 0.01% probability on CCDF, using a 5 MHz carrier spacing. Typical performance at Tcase = 25 °C includes a drain efficiency of 30%, power gain of 17.7 dB, and ACPR of -29 dBc under 2-carrier W-CDMA conditions (VDS = 28 V, IDq = 2400 mA, PL(AV) = 80 W). The device features a maximum junction temperature of 225 °C, a thermal resistance from junction to case of 0.26 K/W, and a drain-source breakdown voltage of 65 V.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets the required environmental directives, such as RoHS compliance, before finalizing procurement specifications. Cross-reference the part number with official Ampleon databases to validate current product status and availability.
Select this component for high-power RF amplifier designs requiring operation within the 2110 MHz to 2170 MHz band. Ensure the application circuit can maintain the recommended case temperature of 25 °C for optimal typical performance metrics. Verify that the biasing network supports the specified quiescent current of 2400 mA and that the load impedance matches the provided typical values for the target frequency.
This device belongs to the BLF8G series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for broadband operation in cellular infrastructure. The SOT502B earless flanged ceramic package facilitates efficient heat dissipation and integration into multi-carrier base station architectures.
Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical characteristics and pin configurations.