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The BLF8G22LS-270GVJ is a 270 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for complex modulation schemes like 3GPP test model 1 with 64 DPCH. The device operates at a drain-source voltage of 28 V with a quiescent current of 2400 mA. It delivers a typical power gain of 17.3 dB and a drain efficiency of 29% under two-carrier W-CDMA conditions. The component utilizes an earless flanged ceramic package (SOT1244C) with integrated ESD protection.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF power component. Confirm RoHS compliance requirements align with the project specifications before finalizing the order.
Select this component for designs requiring high power output within the 2110 MHz to 2170 MHz band. Consider the SOT1244C package dimensions for thermal management and PCB layout. Evaluate the impedance data provided in the datasheet for matching network design to achieve optimal gain and efficiency targets.
This part belongs to the BLF8G22LS series of power LDMOS transistors manufactured by Ampleon. The series is engineered for broadband operation in cellular infrastructure. The 'GV' suffix denotes the specific earless flanged ceramic package version (SOT1244C) equipped with decoupling leads for improved high-frequency performance.
BLF8G22LS-270V serves as the leaded counterpart within the same product family.