BLF8G22LS-310AVJ

BLF8G22LS-310AVJ

  • Description:RF MOSFET LDMOS
  • Series:-

SKU:60457397ae39 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
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BLF8G22LS-310AVJ

Overview

The BLF8G22LS-310AVJ is an RF power LDMOS transistor manufactured by NXP USA Inc. It operates within the S-band frequency range, specifically covering 2110 MHz to 2170 MHz. The device features a drain-source breakdown voltage of 65 V and a continuous drain current of 2 A. Key electrical parameters include a forward transconductance minimum of 2.2 S and a typical gain of 19 dB. The component utilizes a ceramic package configuration designated as SOT-502B-3, suitable for surface mount applications with a maximum operating temperature of +225°C.

Feature Summary

  • Utilizes Silicon LDMOS technology for high-power RF performance
  • Designed for robust operation in demanding thermal environments
  • Optimized for linear amplification in cellular base station architectures

Applications

  • Cellular base station power amplifiers
  • Broadband RF signal amplification
  • Wireless communication infrastructure equipment

Procurement Notes

Verify the specific suffix AVJ against official NXP documentation to confirm pinout compatibility and material compliance status. Ensure that the ordering code matches the exact ceramic package variant required for your PCB layout. Cross-reference the manufacturer's latest datasheet revision to validate all electrical specifications prior to final procurement decisions.

Selection Notes

Select this component when designing S-band amplifiers requiring high linearity and power density. The 65 V breakdown voltage supports standard biasing schemes used in telecommunications infrastructure. Consider the SOT-502B-3 package dimensions during thermal management planning to ensure adequate heat dissipation at maximum operating temperatures.

Part Context

This part belongs to the BLF8G22LS series of RF power transistors. These devices are engineered for use in modern wireless communication systems. The series offers consistent performance characteristics across similar form factors, allowing for standardized design approaches in multi-band amplifier modules.

Replacement Considerations

Consult official substitution lists for direct replacements. Verify pin-to-pin compatibility and electrical parameter equivalence before integrating alternative components into existing designs.

BLF8G22LS-310AVJBLF8G22LS-310AVJ

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