BLF8G24LS-150VU

BLF8G24LS-150VU

$58.38
  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-

SKU:258298a57822 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:19dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1244B
  • Supplier Device Package:CDFM6
  • Configuration:-

Download product information

BLF8G24LS-150VU

Overview

The BLF8G24LS-150VU is a 150 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features improved video bandwidth and low thermal resistance. Key electrical parameters include a drain-source breakdown voltage of 65 V, gate-source threshold voltage ranging from 1.5 V to 2.3 V, and forward transconductance of 16 S typical. The device operates with a drain-source voltage of 28 V and quiescent current of 1300 mA, delivering an average output power of 45 W with a power gain of 19 dB and drain efficiency of 33% under two-carrier W-CDMA conditions.

Feature Summary

  • Decoupling leads provide improved video bandwidth for enhanced digital pre-distortion capability.
  • Lower output capacitance improves performance in Doherty amplifier configurations.
  • Internally matched design simplifies circuit integration and usage.
  • Integrated ESD protection ensures robustness against electrostatic discharge.

Applications

  • RF power amplifiers for base stations operating between 2300 MHz and 2400 MHz
  • Multi-carrier applications utilizing 3GPP test model 1 specifications
  • W-CDMA signal processing requiring high linearity and low memory effects

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant and compliance status. Ensure that the selected component matches the required pin configuration and thermal characteristics for the intended application design.

Selection Notes

Select this component for designs requiring high ruggedness and excellent thermal stability in the 2.3 GHz to 2.4 GHz band. Consider the internal matching and decoupling leads when designing input and output networks to maximize efficiency and minimize external component count.

Part Context

This part belongs to the Ampleon BLF8G series of LDMOS power transistors. It is specifically engineered for wideband code division multiple access (W-CDMA) infrastructure. The device offers a balance of high power output and linearity suitable for modern cellular base station architectures.

Replacement Considerations

BLF8G24LS-150GV serves as a direct alternative within the same product family, sharing identical electrical specifications but differing in package lead configuration.

BLF8G24LS-150VUBLF8G24LS-150VU
$58.38
Buy Now