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The BLF8G24LS-150VU is a 150 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features improved video bandwidth and low thermal resistance. Key electrical parameters include a drain-source breakdown voltage of 65 V, gate-source threshold voltage ranging from 1.5 V to 2.3 V, and forward transconductance of 16 S typical. The device operates with a drain-source voltage of 28 V and quiescent current of 1300 mA, delivering an average output power of 45 W with a power gain of 19 dB and drain efficiency of 33% under two-carrier W-CDMA conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant and compliance status. Ensure that the selected component matches the required pin configuration and thermal characteristics for the intended application design.
Select this component for designs requiring high ruggedness and excellent thermal stability in the 2.3 GHz to 2.4 GHz band. Consider the internal matching and decoupling leads when designing input and output networks to maximize efficiency and minimize external component count.
This part belongs to the Ampleon BLF8G series of LDMOS power transistors. It is specifically engineered for wideband code division multiple access (W-CDMA) infrastructure. The device offers a balance of high power output and linearity suitable for modern cellular base station architectures.
BLF8G24LS-150GV serves as a direct alternative within the same product family, sharing identical electrical specifications but differing in package lead configuration.