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The BLF8G27LS-100GVJ is an LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features a 65 V drain-source voltage rating and operates at a test voltage of 28 V with a quiescent current of 900 mA. The device delivers 25 W of average output power with a typical gain of 17 dB and drain efficiency of 28% under two-carrier W-CDMA conditions. It utilizes an earless flanged ceramic package (SOT1244C) with six leads, including decoupling leads to enhance video bandwidth.
Verify the specific suffix GVJ against official Ampleon documentation to confirm package variant and manufacturing lot details. Confirm RoHS compliance status as per Directive 2002/95/EC. Ensure handling precautions for electrostatic sensitive devices are followed during procurement and storage.
Select this component for designs requiring high ruggedness and thermal stability in Class-AB operation. Verify impedance matching networks using provided S-parameter data for the 2500 MHz to 2700 MHz band. Ensure the application supports the required 28 V supply and 900 mA bias current for optimal performance.
This part belongs to the BLF8G27LS series from Ampleon USA Inc., specifically utilizing the SOT1244C earless flanged ceramic package. It shares core electrical characteristics with the BLF8G27LS-100V but differs in physical packaging configuration.
BLF8G27LS-100V serves as a functional equivalent within the same family, differing primarily in package type (SOT1244B vs SOT1244C). Verify mechanical fit and pinout compatibility before substitution.