BLF8G27LS-100J

Overview

The BLF8G27LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and operates with a drain-source voltage of 65 V maximum, tested at 28 V. The device delivers 100 W CW output power with a typical gain of 17 dB and drain efficiency of 28% under two-carrier W-CDMA conditions. It utilizes an SOT502B earless flanged ceramic package with a thermal resistance from junction to case of 0.292 K/W.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Low thermal resistance providing excellent thermal stability
• Designed for low memory effects providing excellent pre-distortability
• Lower output capacitance for improved performance in Doherty applications

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 2500 MHz to 2700 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm RoHS directive compliance requirements prior to procurement. Check product status updates on official channels as specifications may change without notice.

Selection Notes

Select this component for broadband operations requiring high efficiency and low memory effects. Ensure the design accommodates the SOT502B earless flanged ceramic package dimensions. Verify that the application environment supports the specified junction temperature limits and thermal management requirements.

Part Context

This part belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for wideband coverage across the 2500 MHz to 2700 MHz spectrum. The device integrates internal matching and ESD protection to simplify circuit implementation.

Replacement Considerations

Consult the official Ampleon datasheet for verified substitute part numbers. Do not assume functional equivalence with other models without cross-referencing electrical parameters and package compatibility.