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The BLF8G27LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of up to 65 V and features an internal matching network. The device utilizes an earless flanged ceramic package (SOT502B) with two leads, where Pin 1 is the drain connected to the flange, Pin 2 is the gate, and Pin 3 is the source. Typical performance at Tcase = 25 °C includes a power gain of 17.4 dB, drain efficiency of 32%, and an adjacent channel power ratio of -30 dBc under 2-carrier W-CDMA test conditions.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm RoHS directive compliance requirements prior to procurement. Ensure handling procedures adhere to electrostatic discharge standards due to device sensitivity. Validate that the supplier provides authentic product data sheets matching the exact part number.
Select this component for designs requiring high linearity and efficiency in the 2.5 GHz to 2.7 GHz band. The internal matching simplifies circuit design compared to unmatched alternatives. Consider the SOT502B package dimensions for thermal management and mechanical integration. Evaluate the device's impedance characteristics against the specific load requirements of the target application architecture.
This component belongs to the BLF8 series of LDMOS power transistors from Ampleon USA Inc. The BLF8 family targets wireless infrastructure markets, specifically focusing on broadband and multi-carrier amplification needs. The BLF8G27LS-140 variant is engineered for the 2600 MHz spectrum bands commonly used in modern cellular networks.
Consult official Ampleon substitution guides for verified replacements. Unmatched or differently packaged variants within the BLF8 series may require significant circuit redesign.