BLF8G27LS-140V,118

BLF8G27LS-140V,118

$62.93
  • Description:RF MOSFET LDMOS 32V LDMOST
  • Series:-

SKU:8f180b794ae7 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.63GHz ~ 2.69GHz
  • Gain:17.4dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1120B
  • Supplier Device Package:LDMOST
  • Configuration:-

Download product information

BLF8G27LS-140V,118

Overview

The BLF8G27LS-140V is a 140 W LDMOS power transistor designed for base station applications in the 2600 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems like W-CDMA. The device operates with a drain-source voltage of up to 65 V and a junction temperature limit of 200 °C. In typical class-AB operation at 32 V and 1300 mA quiescent current, it delivers 45 W average output power with 17.4 dB gain and 30% drain efficiency. The transistor utilizes an earless flanged SOT1120B ceramic package.

Feature Summary

  • Decoupling leads provide approximately 100 MHz video bandwidth for enhanced signal fidelity.
  • Lower output capacitance improves performance specifically in Doherty amplifier configurations.
  • Designed for low memory effects to facilitate excellent pre-distortability.
  • Internally matched structure simplifies circuit integration and usage.

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications within the 2600 MHz to 2700 MHz band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and revision status. Confirm RoHS compliance requirements match the project specifications. Check for any recent product change notices or obsolescence alerts directly from Ampleon before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high ruggedness and low thermal resistance in the 2.6 GHz to 2.7 GHz spectrum. Ensure the application supports the specified 65 V drain-source voltage limit and that the PCB layout accommodates the SOT1120B earless flanged package dimensions for proper heat dissipation.

Part Context

This part belongs to the BLF8 series of LDMOS transistors from Ampleon. It is engineered for high-efficiency RF power amplification in cellular infrastructure. The device integrates ESD protection and is built on a robust ceramic substrate to withstand harsh operating conditions common in telecommunications base stations.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameter overlaps and pinout compatibility.

FAQ

What is the typical video bandwidth of the BLF8G27LS-140V?

The device exhibits a typical video bandwidth of 100 MHz in class-AB operation within the 2.6 GHz to 2.7 GHz band.

Is the BLF8G27LS-140V suitable for automotive applications?

No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and should not be used in automotive equipment.

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 200 °C according to the absolute maximum ratings.

BLF8G27LS-140V,118BLF8G27LS-140V,118
$62.93
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