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The BLF944PU is a 135 W LDMOS power transistor designed for non-cellular communication and industrial applications. It operates across a wide frequency range from HF to 1300 MHz, offering high efficiency and excellent ruggedness. The device features integrated dual-sided ESD protection and high power gain. Key electrical parameters include a drain-source voltage of 106 V, a junction temperature rating up to 225 °C, and a thermal resistance (junction-to-case) of 0.45 K/W. At 860 MHz with pulsed RF operation at VDS = 32 V, it delivers 135 W output power with a typical drain efficiency of 67% and power gain of 20.3 dB.
Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the package type matches the required SOT1228A flanged ceramic housing. Ensure compliance with RoHS standards as specified in the product details on the manufacturer's website. Check for any recent product status changes or revision updates via the official sales office.
Select this component for designs requiring robust performance in non-cellular communication systems operating up to 1300 MHz. Consider the 106 V drain-source voltage limit and 225 °C maximum junction temperature when designing thermal management solutions. Verify that the application circuit can handle the required load mismatch conditions to maintain device reliability.
The BLF944PU belongs to the BLF944P series of power LDMOS transistors manufactured by Ampleon. It is housed in an SOT1228A flanged ceramic package designed for efficient heat dissipation. This series is specifically engineered for high-efficiency broadband applications where ruggedness and stability are critical requirements.
Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume compatibility with other LDMOS devices without verifying pinout, electrical limits, and thermal characteristics.