BLF9G38LS-90PU

BLF9G38LS-90PU

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:ae50e83b83d2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:15dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:20W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

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BLF9G38LS-90PU

Overview

The BLF9G38LS-90PU is a 90 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3600 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internally matched structure within an earless flanged ceramic SOT1121B package. The device provides a typical power gain of 15 dB and a drain efficiency of 28% at 20 W average output power under 1-carrier W-CDMA conditions. It includes integrated ESD protection and exhibits excellent ruggedness, supporting a VSWR of 10:1 through all phases.

Feature Summary

  • Internally matched design simplifies circuit integration
  • Low thermal resistance ensures stable operation
  • Reduced output capacitance optimizes Doherty amplifier performance
  • Integrated electrostatic discharge protection

Applications

  • RF power amplifiers for LTE base stations
  • Multi-carrier applications in the 3400 MHz to 3600 MHz band
  • Doherty amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure compliance with RoHS directives as stated in the product profile. Confirm that the component meets the required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular infrastructure operating between 3.4 GHz and 3.6 GHz. The internal matching network reduces external component count. Evaluate thermal management requirements based on the junction-to-case thermal resistance characteristics provided in the datasheet to ensure reliable long-term operation.

Part Context

This part belongs to the BLF9G series of LDMOS transistors manufactured by Ampleon. The series targets broadband and multi-carrier base station applications. The BLF9G38LS-90P variant specifically addresses the 3.4–3.6 GHz spectrum, offering a balance of high output power and linearity suitable for modern wireless communication protocols.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinout compatibility and electrical parameters such as breakdown voltage and thermal resistance when evaluating alternative components for system upgrades or supply chain adjustments.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF9G38LS-90PU can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified test conditions.

Does the device include built-in protection mechanisms?

Yes, the transistor features integrated electrostatic discharge (ESD) protection to enhance reliability during handling and operation.

What is the typical video bandwidth in Doherty operation?

The device demonstrates a typical video bandwidth of 100 MHz in Doherty development test circuits at 3500 MHz.

BLF9G38LS-90PUBLF9G38LS-90PU

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