BLL1214-250R,112

Overview

The BLL1214-250R is a silicon N-channel enhancement mode LDMOS power transistor designed for high-power RF applications. Encapsulated in the SOT502A flanged ceramic package with a common source connected to the mounting base, it operates optimally within the 1.2 GHz to 1.4 GHz frequency range. Typical pulsed performance at 36 V supply and 150 mA quiescent current yields 250 W output power, 13 dB gain, and 47% drain efficiency. The device supports a maximum drain-source voltage of 75 V and total power dissipation up to 400 W under specified thermal conditions.

Feature Summary

• High power gain suitable for demanding RF amplification tasks
• Source connection to the mounting base eliminates DC isolators and reduces common mode inductance
• Excellent ruggedness capable of withstanding load mismatches corresponding to VSWR = 3:1 through all phases

Applications

• L-band radar systems operating between 1.2 GHz and 1.4 GHz

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration and manufacturing revision. Confirm that the component status aligns with current production availability before finalizing design-in decisions. Cross-reference datasheet revisions to ensure compliance with the latest electrical specifications and absolute maximum ratings provided by the manufacturer.

Selection Notes

Select this component for applications requiring high output power in the L-band spectrum. Ensure the thermal management system can maintain the junction temperature below 200 °C and the heatsink temperature within limits defined by the transient thermal impedance curves. Verify that the bias circuitry provides the required 36 V drain supply and appropriate gate threshold control for class-AB operation.

Part Context

This part belongs to the BLL series of LDMOS power transistors manufactured by Ampleon USA Inc. It represents a specialized solution for high-frequency, high-power amplification where robustness against impedance mismatches is critical. The SOT502A package facilitates efficient heat dissipation and straightforward integration into microwave circuits.

Replacement Considerations

Consult official Ampleon cross-reference guides or contact sales offices directly for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without validating pinout compatibility, impedance matching networks, and thermal characteristics against the original datasheet.

FAQ

What is the maximum Voltage Standing-Wave Ratio (VSWR) the device can withstand?

The BLL1214-250R can withstand a load mismatch corresponding to a VSWR of 3:1 through all phases while operating at rated load power.

How is the source terminal connected in the SOT502A package?

The common source is connected directly to the flange, which serves as the mounting base.

What are the typical rise and fall times for pulsed RF operation?

Under typical test conditions (tp = 1 ms, δ = 10%), the rise time is 15 ns and the fall time is 5 ns.