BLL1214-35,112

Overview

The BLL1214-35 is an L-band radar LDMOS driver transistor manufactured by Ampleon. It is a silicon N-channel enhancement mode lateral D-MOS device encapsulated in a SOT467C flange package with a ceramic cap. The component operates within the 1200 to 1400 MHz frequency range. Key electrical parameters include a drain-source voltage of 36 V, output power of 35 W, and power gain exceeding 13 dB under pulsed class-AB conditions (t=1 ms; δ = 10%). The maximum drain-source breakdown voltage is 75 V, and total power dissipation reaches 110 W at Th ≤ 25 °C.

Feature Summary

• High power gain suitable for driver applications
• Excellent ruggedness capable of withstanding VSWR = 5:1 through all phases
• Source on mounting base eliminates DC isolators and reduces common mode inductance

Applications

• L-band radar systems operating between 1200 and 1400 MHz

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm availability and exact specifications. Confirm that the component meets the required environmental standards for the intended deployment environment. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity during transport and installation.

Selection Notes

Select this component for L-band radar designs requiring a robust driver stage. Verify thermal management capabilities as the junction temperature must not exceed 200 °C. Ensure the input and output impedance matching networks align with the typical impedance values provided in the datasheet for the target operating frequency.

Part Context

This part belongs to the family of LDMOS transistors designed for high-power RF applications. Originally developed under Philips Semiconductors, it was transitioned to Ampleon following the spin-off in December 2015. The device utilizes lateral D-MOS technology optimized for linear amplification in pulsed modes.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without verifying pinout compatibility and electrical parameter alignment.