BLL6H0514L-130,112

BLL6H0514L-130,112

$199.25
  • Description:RF FET LDMOS 100V 17DB SOT1135A
  • Series:-

SKU:1a0a6aef5727 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF FET LDMOS 100V 17DB SOT1135A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:17dB
  • Voltage - Test:50 V
  • Current Rating (Amps):18A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:130W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1135A
  • Supplier Device Package:CDFM2
  • Configuration:-

Download product information

BLL6H0514L-130,112

Overview

The BLL6H0514L-130 is a 130 W LDMOS driver transistor designed for pulsed applications within the 0.5 GHz to 1.4 GHz frequency range. It operates with a drain-source voltage of 50 V and delivers 130 W output power at 1.2 GHz to 1.4 GHz, achieving typical drain efficiency of 50% and power gain of 17 dB. The device features integrated ESD protection and exhibits excellent ruggedness, supporting load mismatches up to VSWR = 5:1. Packaged in SOT1135A flanged ceramic housing, it complies with RoHS directives and offers high thermal stability for broadband RF amplifier designs.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • High flexibility regarding pulse format configurations
  • Excellent ruggedness under load mismatch conditions
  • Compliant with Restriction of Hazardous Substances (RoHS) directive

Applications

  • Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

Procurement Notes

Verify the specific package variant required, as the BLL6H0514L-130 corresponds to the SOT1135A flanged ceramic package with mounting holes, distinct from the earless SOT1135B version. Confirm that the application environment respects the absolute maximum ratings, particularly the junction temperature limit of 200 °C and the drain-source voltage of 100 V. Ensure proper ESD handling procedures are followed during assembly due to the sensitivity of the gate structure.

Selection Notes

Select this component for broadband pulsed RF driver stages requiring high linearity and efficiency between 0.5 GHz and 1.4 GHz. The device is suitable for class-AB operation with a quiescent current of 50 mA. Designers must account for the transient thermal impedance values provided for various pulse widths and duty cycles to ensure reliable junction temperature management under peak power conditions.

Part Context

This part belongs to the BLL6H0514LS-130 family of LDMOS driver transistors manufactured by Ampleon. The 'L' suffix denotes the SOT1135A package with two mounting holes, whereas the 'LS' variant uses the SOT1135B earless package. Both share identical electrical characteristics and pinouts, differing only in mechanical mounting features.

Replacement Considerations

The BLL6H0514LS-130 serves as a direct functional substitute, sharing identical electrical specifications and pinout definitions. The primary difference lies in the mechanical package; the LS version utilizes an earless flanged ceramic package (SOT1135B), requiring verification of board layout compatibility regarding mounting hole placement.

BLL6H0514L-130,112BLL6H0514L-130,112
$199.25
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