BLL6H0514LS-130,11

Overview

The BLL6H0514LS-130 is a 130 W LDMOS transistor designed for pulsed applications in the 0.5 GHz to 1.4 GHz range. It operates with a drain-source voltage of 50 V and delivers 130 W output power at 1.2 GHz to 1.4 GHz, achieving a typical power gain of 17 dB and drain efficiency of 50%. The device features a maximum junction temperature of 200 °C and includes integrated ESD protection. It is housed in an earless flanged ceramic SOT1135B package.

Feature Summary

• High flexibility regarding pulse formats
• Excellent ruggedness under load mismatch conditions
• Integrated electrostatic discharge (ESD) protection

Applications

• Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

Procurement Notes

Verify the specific ordering suffix 'S' to confirm the earless flanged ceramic package variant (SOT1135B). Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the component status remains active on official Ampleon channels before finalizing orders.

Selection Notes

Select this component for broadband driver stages requiring high power density in pulsed RF environments. Verify thermal management capabilities against transient thermal impedance values provided in the datasheet. Ensure the application circuit supports class-AB operation with appropriate biasing for the specified 50 mA quiescent current.

Part Context

This part belongs to the BLL6H0514L series of LDMOS driver transistors manufactured by Ampleon. The 'LS' designation specifically identifies the earless flanged ceramic package version (SOT1135B), distinguishing it from the standard flanged variant (SOT1135A). Both variants share identical electrical characteristics and performance specifications.

Replacement Considerations

The BLL6H0514L-130 serves as the primary alternative within the same product family, differing only in package configuration (SOT1135A vs. SOT1135B). No other cross-model substitutes are documented in the official data sheet.