BLL6H1214-500,112

BLL6H1214-500,112

$507.64
  • Description:RF MOSFET LDMOS 50V SOT539A
  • Series:-

SKU:6b699b27c4ef Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT539A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:17dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:500W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-539A
  • Supplier Device Package:SOT539A
  • Configuration:Dual, Common Source

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BLL6H1214-500,112

Overview

The BLL6H1214-500,112 is an LDMOS power transistor designed for L-band radar applications operating between 1.2 GHz and 1.4 GHz. It delivers a typical output power of 500 W with a drain efficiency of 50% and a gain of 17 dB at VDS = 50 V. The device features a balanced ceramic package (SOT539A) with two mounting holes and four leads. Key electrical limits include a drain-source voltage of 100 V and a junction temperature rating up to 200 °C.

Feature Summary

  • Internally matched for ease of use
  • High flexibility with respect to pulse formats
  • Excellent ruggedness under load mismatch conditions
  • Integrated ESD protection

Applications

  • L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package version and compliance status. Ensure that the procurement channel provides valid traceability and authenticity guarantees for RF power components. Confirm RoHS directive compliance requirements match the project specifications before finalizing orders.

Selection Notes

Select this component for high-power L-band radar systems requiring robust performance across a broad frequency range. Evaluate thermal management capabilities based on the specified transient thermal impedance values. Consider the internal matching network when designing input and output circuits to optimize system integration and minimize external component count.

Part Context

This part belongs to Ampleon's LDMOS L-band radar power transistor family. It shares design characteristics with the BLL6H1214LS-500 variant, differing primarily in the physical package configuration. The series is engineered to provide high power density and durability for demanding radar environments.

Replacement Considerations

The BLL6H1214LS-500 serves as a functional alternative within the same product family. Verify mechanical fitment differences due to the earless flanged ceramic package (SOT539B) compared to the standard flanged package (SOT539A). Electrical parameters remain consistent, but PCB layout adjustments may be necessary.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 100 V.

Does the device support broadband operation?

Yes, it is designed for broadband operation covering the 1.2 GHz to 1.4 GHz frequency range.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified pulsed conditions.

BLL6H1214-500,112BLL6H1214-500,112
$507.64
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