BLL6H1214LS-250,11

BLL6H1214LS-250,11

$205.43
  • Description:RF MOSFET LDMOS 50V SOT502B
  • Series:-

SKU:15f11de5ce87 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray,Tray
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:17dB
  • Voltage - Test:50 V
  • Current Rating (Amps):42A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:250W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLL6H1214LS-250,11

Overview

The BLL6H1214LS-250,11 is a 250 W LDMOS power transistor designed for L-band radar applications operating between 1.2 GHz and 1.4 GHz. It features an internally matched SOT502B earless flanged ceramic package with two leads. Typical pulsed RF performance at 50 V supply voltage and 100 mA quiescent current yields 250 W output power, 17 dB gain, and 55% drain efficiency. The device supports pulse durations up to 500 µs with duty cycles of 20%. It exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases under specified conditions.

Feature Summary

  • Internally matched design for simplified circuit integration
  • High flexibility regarding various pulse format requirements
  • Robust operation capable of handling significant load mismatches

Applications

  • L-band power amplifiers for radar systems in the 1.2 GHz to 1.4 GHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package configuration. Confirm that the component meets RoHS Directive 2002/95/EC compliance requirements for your project specifications. Ensure proper ESD handling protocols are followed during transport and assembly due to device sensitivity.

Selection Notes

Select this component for high-power L-band radar transmitter designs requiring efficient pulsed operation. Evaluate thermal management strategies based on the transient thermal impedance characteristics provided in the datasheet. Ensure the application circuit utilizes appropriate decoupling capacitors and stripline PCB materials as recommended for stable class-AB production test conditions.

Part Context

This part belongs to the BLL6H series of LDMOS transistors from Ampleon. It shares core electrical specifications with the BLL6H1214L-250 variant, differing primarily in the physical package style. The LS designation indicates the SOT502B earless flanged package, which lacks mounting holes compared to the standard flanged version.

Replacement Considerations

The BLL6H1214L-250 serves as a direct functional equivalent with identical electrical parameters but utilizes the SOT502A package with mounting holes instead of the SOT502B earless flange.

BLL6H1214LS-250,11BLL6H1214LS-250,11
$205.43
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