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The BLL6H1214LS-250,11 is a 250 W LDMOS power transistor designed for L-band radar applications operating between 1.2 GHz and 1.4 GHz. It features an internally matched SOT502B earless flanged ceramic package with two leads. Typical pulsed RF performance at 50 V supply voltage and 100 mA quiescent current yields 250 W output power, 17 dB gain, and 55% drain efficiency. The device supports pulse durations up to 500 µs with duty cycles of 20%. It exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases under specified conditions.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package configuration. Confirm that the component meets RoHS Directive 2002/95/EC compliance requirements for your project specifications. Ensure proper ESD handling protocols are followed during transport and assembly due to device sensitivity.
Select this component for high-power L-band radar transmitter designs requiring efficient pulsed operation. Evaluate thermal management strategies based on the transient thermal impedance characteristics provided in the datasheet. Ensure the application circuit utilizes appropriate decoupling capacitors and stripline PCB materials as recommended for stable class-AB production test conditions.
This part belongs to the BLL6H series of LDMOS transistors from Ampleon. It shares core electrical specifications with the BLL6H1214L-250 variant, differing primarily in the physical package style. The LS designation indicates the SOT502B earless flanged package, which lacks mounting holes compared to the standard flanged version.
The BLL6H1214L-250 serves as a direct functional equivalent with identical electrical parameters but utilizes the SOT502A package with mounting holes instead of the SOT502B earless flange.