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The BLL6H1214P2S-250 is a 250 W LDMOS power module designed for L-band radar applications operating between 1.2 GHz and 1.4 GHz. It features input/output 50 Ω matching, high efficiency, and excellent thermal stability. Typical performance at Tcase = 25 °C, VDS = 45 V, IDq = 200 mA, and Pi = 26 dBm includes a saturated output power of 53.0 dBm, power gain of 27 dB, and added efficiency of 48%. The device supports pulsed RF operation with a frequency range of 1210 MHz to 1405 MHz.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the requested part matches the SOM039 pallet package description. Check for any recent revision updates or superseding documents before finalizing procurement orders.
Select this component for L-band radar designs requiring high power density and broadband operation. Ensure the application circuit can maintain the case temperature within specified limits to preserve reliability. Verify that the drive level and duty cycle align with the tested parameters for optimal gain and efficiency performance.
This device belongs to Ampleon's LDMOS L-band radar power module portfolio. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to deliver high output power in a robust package suitable for demanding radar environments. The product line focuses on providing durable solutions for long-wave band applications.
Consult official Ampleon substitution guides for verified equivalent models. Do not assume compatibility based solely on pin count or general specifications without verifying electrical characteristics and mechanical dimensions.
The absolute maximum drain-source voltage (VDS) is rated at 50 V.
It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified pulsed operating conditions.
The maximum junction temperature (Tj) is limited to 225 °C.