BLL8H1214L-250U

BLL8H1214L-250U

$283.11
  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-

SKU:f24c6894cba6 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:17dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:250W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLL8H1214L-250U

Overview

The BLL8H1214L-250 is a 250 W LDMOS power transistor designed for L-band radar applications in the 1.2 GHz to 1.4 GHz range. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 17 dB at 250 W output power. The device achieves a drain efficiency of 55% under pulsed RF conditions (tp = 300 μs, duty cycle = 10%). Key electrical parameters include a breakdown voltage of 100 V, a threshold voltage ranging from 1.3 V to 2.25 V, and an on-state resistance of 169 mΩ maximum. It features internal matching for ease of use and complies with RoHS standards.

Feature Summary

  • Integrated dual-side ESD protection
  • High flexibility regarding pulse formats
  • Excellent ruggedness and thermal stability
  • Internally matched for simplified circuit design

Applications

  • L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range

Procurement Notes

Verify the specific package variant required for the application. The BLL8H1214L-250 utilizes the SOT502A flanged ceramic package with two mounting holes and two leads. Ensure that ordering documentation explicitly references this part number to distinguish it from the earless SOT502B variant or other family members. Confirm compliance with Directive 2002/95/EC requirements if necessary for the final assembly.

Selection Notes

Select this component for high-power L-band radar systems requiring robust performance in class-AB operation. The device withstands load mismatches corresponding to a VSWR of 10:1 through all phases. Designers should account for the transient thermal impedance values provided for various pulse widths and duty cycles to ensure junction temperature limits are not exceeded during peak operation.

Part Context

This transistor belongs to Ampleon's LDMOS L-band radar power transistor series. It shares functional similarities with the BLL8H1214LS-250, which uses an earless flanged ceramic package (SOT502B). Both variants target the same 250 W output power specification within the 1.2 GHz to 1.4 GHz band, offering designers packaging options based on mechanical mounting constraints.

Replacement Considerations

The BLL8H1214LS-250 is a direct alternative within the same product family, differing only in the physical package configuration (earless flanged ceramic SOT502B versus flanged ceramic SOT502A). No other substitutes are documented in the official datasheet.

BLL8H1214L-250UBLL8H1214L-250U
$283.11
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