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The BLL8H1214L-250 is a 250 W LDMOS power transistor designed for L-band radar applications in the 1.2 GHz to 1.4 GHz range. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 17 dB at 250 W output power. The device achieves a drain efficiency of 55% under pulsed RF conditions (tp = 300 μs, duty cycle = 10%). Key electrical parameters include a breakdown voltage of 100 V, a threshold voltage ranging from 1.3 V to 2.25 V, and an on-state resistance of 169 mΩ maximum. It features internal matching for ease of use and complies with RoHS standards.
Verify the specific package variant required for the application. The BLL8H1214L-250 utilizes the SOT502A flanged ceramic package with two mounting holes and two leads. Ensure that ordering documentation explicitly references this part number to distinguish it from the earless SOT502B variant or other family members. Confirm compliance with Directive 2002/95/EC requirements if necessary for the final assembly.
Select this component for high-power L-band radar systems requiring robust performance in class-AB operation. The device withstands load mismatches corresponding to a VSWR of 10:1 through all phases. Designers should account for the transient thermal impedance values provided for various pulse widths and duty cycles to ensure junction temperature limits are not exceeded during peak operation.
This transistor belongs to Ampleon's LDMOS L-band radar power transistor series. It shares functional similarities with the BLL8H1214LS-250, which uses an earless flanged ceramic package (SOT502B). Both variants target the same 250 W output power specification within the 1.2 GHz to 1.4 GHz band, offering designers packaging options based on mechanical mounting constraints.
The BLL8H1214LS-250 is a direct alternative within the same product family, differing only in the physical package configuration (earless flanged ceramic SOT502B versus flanged ceramic SOT502A). No other substitutes are documented in the official datasheet.