BLP0427M9S20Z

Overview

The BLP0427M9S20Z is a plastic LDMOS power transistor designed for general-purpose applications across the 400 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers up to 20 W output power. The device features high efficiency, excellent ruggedness, and integrated ESD protection. Key electrical parameters include a typical power gain of 19 dB, a drain efficiency exceeding 50% in continuous wave operation, and a gate-source threshold voltage of 2.0 V. It utilizes a TO-270-2F-1 package with an exposed heatsink for effective thermal management.

Feature Summary

• Broadband capability from 400 MHz to 2700 MHz
• High power gain and drain efficiency
• Integrated electrostatic discharge (ESD) protection
• Excellent thermal stability and ruggedness

Applications

• Radar and avionics systems
• Broadcast transmitter applications
• Wireless communications infrastructure
• Industrial, scientific, and medical (ISM) equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and quantity specifications. Confirm RoHS compliance status directly through official Ampleon channels prior to procurement. Ensure that all handling procedures strictly adhere to the specified Electrostatic Discharge (ESD) sensitivity classifications to prevent component damage during assembly and testing.

Selection Notes

Select this component for designs requiring broadband RF amplification between 400 MHz and 2700 MHz. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the intended power dissipation levels. Verify that the required operating voltage and current conditions align with the absolute maximum ratings provided in the datasheet to maintain device reliability and performance longevity.

Part Context

This part belongs to the BLP0427M9S20 series of power LDMOS transistors manufactured by Ampleon. The Z suffix indicates a specific tape and reel packaging configuration for automated surface-mount assembly. This series is engineered for robust performance in demanding RF environments, offering a balance of high power density and operational stability across wide bandwidths.

Replacement Considerations

BLP0427M9S20G

FAQ

What is the maximum junction temperature for the BLP0427M9S20Z?

The maximum junction temperature is 225 °C.

Does the BLP0427M9S20Z include built-in protection mechanisms?

Yes, the device includes integrated electrostatic discharge (ESD) protection.

What is the typical power gain at 1842.5 MHz?

The typical power gain is 19 dB under pulsed CW test conditions at 1842.5 MHz.