BLP05H6150XRY

Overview

The BLP05H6150XRY is a 150 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It features a drain-source voltage of 135 V, a junction temperature rating of 225 °C, and a thermal resistance from junction to case of 0.6 K/W. The device provides a typical power gain of 27 dB and a drain efficiency of 75% at 108 MHz pulsed operation. It is housed in an HSOP4F plastic heatsink small outline package (SOT1223-2) with four leads.

Feature Summary

• Integrated double-sided ESD protection
• Excellent ruggedness capable of withstanding high load mismatch
• High efficiency and excellent thermal stability

Applications

• Industrial, scientific and medical applications
• Broadcast transmitter applications

Procurement Notes

Verify the exact ordering suffix against the manufacturer's current catalog, as the XR designation corresponds to the SOT1223-2 straight lead package. Confirm RoHS compliance status and check for any recent product change notices that may affect pinning or packaging specifications before finalizing procurement orders.

Selection Notes

Select this component for broadband RF power amplification where high ruggedness and thermal stability are required. Ensure the application circuit can support the specified 135 V drain-source voltage limit and manage the 225 °C maximum junction temperature through adequate heatsinking to maintain reliability under continuous operating conditions.

Part Context

This part belongs to the Ampleon BLP05 series of power LDMOS transistors. The specific model utilizes the HSOP4F package variant, which differs from the XRG version by using straight leads instead of gull-wing leads. Both variants share identical electrical characteristics and are intended for similar high-power RF applications.

Replacement Considerations

The BLP05H6150XRG serves as a direct functional replacement, differing only in the lead form factor (gull-wing versus straight). Verify mechanical footprint compatibility on the PCB when substituting between these two package versions.

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) greater than 65:1 through all phases.

How does the gate-source threshold voltage vary?

The gate-source threshold voltage typically ranges from 1.25 V to 2.25 V under standard test conditions.