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The BLP05H635XRG is a 35 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It features integrated double-sided ESD protection, high efficiency, and excellent thermal stability. The device operates with a drain-source voltage of up to 135 V and a junction temperature limit of 225 °C. At 108 MHz pulsed RF operation, it delivers 35 W output power with 75% drain efficiency and 27 dB gain. The component utilizes an HSOP4F plastic heatsink small outline package (SOT1224-2) with gull-wing leads.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the package variant. The 'G' suffix indicates the SOT1224-2 gull-wing lead configuration, distinct from the straight lead version. Confirm RoHS compliance status and check for any recent revision updates on the official Ampleon website before finalizing procurement specifications.
Select this component for designs requiring high ruggedness and efficient power amplification in the HF to 600 MHz spectrum. Ensure the application circuit can manage the maximum junction temperature of 225 °C and provides adequate heat sinking for the HSOP4F package. Verify that the gate-source voltage limits are respected during operation to prevent permanent damage.
This part belongs to the BLP05H635 series of power LDMOS transistors manufactured by Ampleon. The datasheet covers both the BLP05H635XR (straight leads) and BLP05H635XRG (gull-wing leads) variants within the same document structure. Both share identical electrical characteristics and performance metrics.
The BLP05H635XR serves as the direct functional equivalent with a different mechanical lead form factor. No other cross-model substitutes are documented in the provided source material.