BLP05H635XRGY

BLP05H635XRGY

$35.00
  • Description:RF MOSFET LDMOS 50V 4HSOP
  • Series:-

SKU:d13c18917487 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 4HSOP
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:108MHz
  • Gain:27dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:10 mA
  • Power - Output:35W
  • Voltage - Rated:135 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package:4-HSOP
  • Configuration:Dual, Common Source

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BLP05H635XRGY

Overview

The BLP05H635XRG is a 35 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It features integrated double-sided ESD protection, high efficiency, and excellent thermal stability. The device operates with a drain-source voltage of up to 135 V and a junction temperature limit of 225 °C. At 108 MHz pulsed RF operation, it delivers 35 W output power with 75% drain efficiency and 27 dB gain. The component utilizes an HSOP4F plastic heatsink small outline package (SOT1224-2) with gull-wing leads.

Feature Summary

  • Designed for broadband operation across the HF to 600 MHz frequency range
  • Capable of withstanding severe load mismatches corresponding to VSWR > 65:1 through all phases
  • Features integrated double-sided electrostatic discharge (ESD) protection

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm the package variant. The 'G' suffix indicates the SOT1224-2 gull-wing lead configuration, distinct from the straight lead version. Confirm RoHS compliance status and check for any recent revision updates on the official Ampleon website before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high ruggedness and efficient power amplification in the HF to 600 MHz spectrum. Ensure the application circuit can manage the maximum junction temperature of 225 °C and provides adequate heat sinking for the HSOP4F package. Verify that the gate-source voltage limits are respected during operation to prevent permanent damage.

Part Context

This part belongs to the BLP05H635 series of power LDMOS transistors manufactured by Ampleon. The datasheet covers both the BLP05H635XR (straight leads) and BLP05H635XRG (gull-wing leads) variants within the same document structure. Both share identical electrical characteristics and performance metrics.

Replacement Considerations

The BLP05H635XR serves as the direct functional equivalent with a different mechanical lead form factor. No other cross-model substitutes are documented in the provided source material.

BLP05H635XRGYBLP05H635XRGY
$35.00
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