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The Ampleon BLP05H6700XRY is a 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, aerospace and defense applications in the HF to 600 MHz band. It operates at 50 V with integrated dual-sided ESD protection enabling Class C operation. At 108 MHz pulsed RF (tp=100 μs, δ=20%), it delivers 700 W output power with 26 dB gain and 75% drain efficiency. Limiting values include a drain-source voltage of 135 V and junction temperature up to 225 °C. Thermal resistance from junction to case is 0.21 K/W.
Verify the specific package variant required for the design. The 'XR' suffix denotes the SOT1138-3 package with straight leads, while 'XRG' indicates the SOT1204-3 package with gull wing leads. Confirm RoHS compliance status via official manufacturer channels before finalizing procurement specifications.
Select this component for high-power RF amplification requiring extreme load mismatch tolerance. Ensure the application supports the specified 50 V drain supply and manages heat dissipation effectively given the 0.21 K/W thermal resistance. Verify that the operating frequency falls within the HF to 600 MHz bandwidth for optimal performance.
This device belongs to the BLP05H6700 series of power LDMOS transistors manufactured by Ampleon. It serves as a robust solution for demanding RF environments where standard transistors might fail under severe VSWR conditions. The series is engineered specifically for high-reliability sectors such as broadcasting and defense systems.
The datasheet lists BLP05H6700XRG as a related part number offering an alternative gull-wing leaded package option. No other direct cross-model replacements are documented in the provided source material.