BLP05H675XRGY

Overview

The BLP05H675XRGY is a 75 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 135 V and a gate-source voltage range of -6 V to +11 V. At 108 MHz, it delivers 75 W output power with 27 dB gain and 75% drain efficiency under pulsed RF conditions (tp = 100 µs; δ = 20%). The device features integrated double-sided ESD protection and excellent thermal stability. It is housed in a 4-lead HSOP4F plastic heatsink small outline package (SOT1224-2) compliant with RoHS directives.

Feature Summary

• Designed for broadband operation across the HF to 600 MHz frequency range
• Capable of withstanding extreme load mismatch conditions corresponding to VSWR > 65:1 through all phases
• Features integrated double-sided electrostatic discharge (ESD) protection
• Provides high efficiency and excellent thermal stability

Applications

• Industrial, scientific and medical (ISM) applications
• Broadcast transmitter applications

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm compliance with Directive 2002/95/EC regarding hazardous substances. Ensure handling procedures adhere to ESD sensitivity standards such as ANSI/ESD S20.20 or IEC/ST 61340-5 to prevent damage during assembly and testing.

Selection Notes

Select this component for designs requiring high ruggedness and wideband performance up to 600 MHz. Verify that the application circuit can accommodate the required thermal management, given the junction-to-case thermal resistance. Ensure the operating environment does not exceed the maximum junction temperature of 225 °C to maintain reliability.

Part Context

This part belongs to the BLP05H6xxxXR series of overmolded plastic (OMP) RF power transistors from Ampleon. The series utilizes robust LDMOS technology and shares a common SOT1223/SOT1224 package footprint. This specific model represents the 75 W power level variant within the broader product family.

Replacement Considerations

The BLP05H675XR serves as the straight lead equivalent to the BLP05H675XRGY gull-wing version. Both share identical electrical characteristics and are documented together in the same product data sheet.

FAQ

What is the maximum load mismatch the device can withstand?

The BLP05H675XRGY can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) greater than 65:1 through all phases under specified test conditions.

Does the device include built-in protection mechanisms?

Yes, the transistor features integrated double-sided electrostatic discharge (ESD) protection.

What is the typical drain efficiency at rated power?

At 108 MHz with 75 W output power, the typical drain efficiency is 75% under pulsed RF conditions.