SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLP05H675XRY is a 75 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of up to 135 V and features integrated double-sided ESD protection. The device delivers a typical power gain of 27 dB and a drain efficiency of 75% at 108 MHz under pulsed RF conditions (VDS = 50 V, IDq = 20 mA). It utilizes an HSOP4F plastic heatsink small outline package (SOT1223-2) with four flat leads.
Verify the specific ordering suffix against official Ampleon documentation to confirm the exact package variant. The standard datasheet covers the straight lead version (BLP05H675XR), while the gull-wing version is designated as BLP05H675XRG. Ensure the component matches the required pin configuration before procurement.
Select this component for designs requiring high output power in the HF to 600 MHz spectrum. Verify that the application environment supports the specified junction temperature limits and thermal resistance requirements. Confirm compatibility with class-AB production test circuits if operating near maximum rated power levels.
This part belongs to the BLP05H675XR series manufactured by Ampleon. The series includes variants such as BLP05H675XRG, which shares identical electrical specifications but differs in the physical lead form factor. Both versions are classified as power LDMOS transistors intended for robust RF amplification tasks.
The BLP05H675XRG serves as a direct functional substitute within the same family, differing only in the package lead style from straight to gull-wing. No other cross-manufacturer replacements are confirmed in the provided documentation.