BLP10H603Z

Overview

The BLP10H603Z is an RF power transistor manufactured by Ampleon USA Inc., utilizing LDMOS technology. It operates within a frequency range of 0.01 to 1.4 GHz, delivering 2.5 W of output power with a gain of 22.8 dB. The device features a 50 V drain-source voltage and is housed in an SOT1352-1 package.

Feature Summary

• LDMOS construction for high reliability
• Optimized for broadband RF applications
• Integrated thermal management

Applications

• Broadband amplification
• Wireless infrastructure
• Test and measurement equipment

Procurement Notes

Verify the specific datasheet revision and ordering suffix directly with Ampleon or authorized distributors. Confirm that the SOT1352-1 package dimensions and pinout match your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a 2.5 W output at 50 V is required across a wide bandwidth up to 1.4 GHz. Ensure the design supports the thermal dissipation needs of the SOT1352-1 package for continuous operation at specified power levels.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors designed for robust performance in demanding environments. It serves as a key active element in linear amplifier stages where efficiency and linearity are critical for signal integrity.

Replacement Considerations

Consult official substitution lists for compatible LDMOS devices from Ampleon. Verify electrical parameters and package compatibility before replacing with alternative manufacturers' parts.