BLP10H610Z

Overview

The BLP10H610 is a 10 W plastic LDMOS power transistor designed for broadcast transmitter and ISM applications across frequencies from HF to 1400 MHz. It operates with a drain-source voltage of up to 104 V and features integrated ESD protection. The device utilizes an HVSON12 package (SOT1352-1) with dimensions of 5 x 6 x 0.85 mm. Key electrical parameters include a typical power gain of 22 dB at 860 MHz, a drain efficiency of 60%, and a thermal resistance from junction to case of 3.5 K/W. The maximum junction temperature is rated at 150 °C.

Feature Summary

• Broadband operation capability spanning from HF to 1400 MHz
• Integrated electrostatic discharge (ESD) protection
• Excellent ruggedness capable of withstanding high VSWR mismatches
• High efficiency and excellent thermal stability

Applications

• Industrial, scientific and medical (ISM) applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific ordering information against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet. Ensure proper handling procedures are followed due to the device's sensitivity to electrostatic discharge during storage and installation.

Selection Notes

Select this component for designs requiring broadband RF amplification between HF and 1400 MHz. Consider the 10 W output power capability and the HVSON12 package constraints for thermal management. Verify that the application environment supports the recommended operating conditions, specifically the drain-source voltage and quiescent current settings for optimal performance.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio, which focuses on radio frequency power solutions. The BLP10H610 serves as a driver stage component suitable for high-frequency applications. It is manufactured using laterally diffused metal-oxide semiconductor technology to ensure reliability and performance in demanding RF environments.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume cross-compatibility with other LDMOS devices without verifying pinout, electrical specifications, and thermal characteristics against the original design requirements.

FAQ

What is the maximum drain-source voltage rating for the BLP10H610?

The absolute maximum drain-source voltage (VDS) rating is 104 V.

Does the BLP10H610 have built-in protection features?

Yes, the device includes integrated electrostatic discharge (ESD) protection.

What package type does the BLP10H610 use?

It uses the HVSON12 plastic thermal enhanced very thin small outline package, also known as SOT1352-1.