BLP10H660PY

BLP10H660PY

  • Description:RF MOSFET LDMOS 50V 4HSOPF
  • Series:-

SKU:631eb110eba6 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 4HSOPF
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1GHz
  • Gain:18dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:40 mA
  • Power - Output:60W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-1223-2
  • Supplier Device Package:4-HSOPF
  • Configuration:-

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BLP10H660PY

Overview

The BLP10H660P is a 60 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 1000 MHz band. It features integrated dual-sided ESD protection, excellent ruggedness, high efficiency, and thermal stability. The device supports Class C operation and complete switch-off capabilities. Key electrical parameters include a drain-source voltage of 110 V, a junction temperature rating up to 225 °C, and a typical drain efficiency of 72% at 60 W output power (720 MHz). The part is available in HSOP4F (SOT1223-2) and HSOP4 (SOT1224-2) packages.

Feature Summary

  • Integrated dual-sided ESD protection enables Class C operation and complete switch-off
  • Designed for broadband operation covering the HF to 1000 MHz frequency range
  • Excellent ruggedness capable of withstanding load mismatches exceeding 40:1 VSWR

Applications

  • Industrial, scientific, and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific package variant required for the design, as the BLP10H660P corresponds to the flat-lead SOT1223-2 package, while the BLP10H660PG denotes the standard leaded SOT1224-2 version. Confirm that the ordering suffix accurately reflects the intended mechanical interface before finalizing procurement orders to ensure compatibility with the target PCB footprint.

Selection Notes

Select this component for designs requiring robust RF performance across wide bandwidths from HF to 1 GHz. Ensure the application circuit accommodates the specified gate-source voltage limits of -6 V to +11 V. Verify that the thermal management solution can maintain the junction temperature below the 225 °C maximum limit under continuous operating conditions to preserve device reliability.

Part Context

This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for high-reliability RF amplification. It serves as a specialized solution for scenarios demanding high power density and broad spectral coverage without compromising on ruggedness or thermal stability compared to narrower-band alternatives.

Replacement Considerations

The BLP10H660PG is the direct pin-compatible alternative featuring a different lead configuration (SOT1224-2 versus SOT1223-2). Designers must verify PCB footprint compatibility when substituting between these two variants.

BLP10H660PYBLP10H660PY

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