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The BLP10H660P is a 60 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 1000 MHz band. It features integrated dual-sided ESD protection, excellent ruggedness, high efficiency, and thermal stability. The device supports Class C operation and complete switch-off capabilities. Key electrical parameters include a drain-source voltage of 110 V, a junction temperature rating up to 225 °C, and a typical drain efficiency of 72% at 60 W output power (720 MHz). The part is available in HSOP4F (SOT1223-2) and HSOP4 (SOT1224-2) packages.
Verify the specific package variant required for the design, as the BLP10H660P corresponds to the flat-lead SOT1223-2 package, while the BLP10H660PG denotes the standard leaded SOT1224-2 version. Confirm that the ordering suffix accurately reflects the intended mechanical interface before finalizing procurement orders to ensure compatibility with the target PCB footprint.
Select this component for designs requiring robust RF performance across wide bandwidths from HF to 1 GHz. Ensure the application circuit accommodates the specified gate-source voltage limits of -6 V to +11 V. Verify that the thermal management solution can maintain the junction temperature below the 225 °C maximum limit under continuous operating conditions to preserve device reliability.
This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for high-reliability RF amplification. It serves as a specialized solution for scenarios demanding high power density and broad spectral coverage without compromising on ruggedness or thermal stability compared to narrower-band alternatives.
The BLP10H660PG is the direct pin-compatible alternative featuring a different lead configuration (SOT1224-2 versus SOT1223-2). Designers must verify PCB footprint compatibility when substituting between these two variants.